note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: RH0027C doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number/ordering information 1 / sdr95 __ __ _ _ screening 2 / __ = not screened tx = tx level txv = txv level s = s level package s1= smd1 family/voltage 3 = 300v 4 = 400v 5 = 500v sdr953s1 thru sdr955s1 50 amp hyper fast rectifier 300 - 500 volts 35 nsec features: ? hyper fast recovery: 35 nsec maximum ? high surge rating ? low reverse leakage current ? low junction capacitance ? hermetically sealed surface mount package ? gold eutectic die attach available ? ultrasonic aluminum wire bonds ? maximum ratings 4 / symbol value units peak repetitive reverse and dc blocking voltage 3 / sdr953 sdr954 sdr955 v rrm v rwm v r 300 400 500 volts average rectified forward current (resistive load, 60 hz sine wave, t a = 25oc) i o 50 amps peak surge current (8.3 ms pulse, half sine wave, t a = 25oc) i fsm 450 amps operating & storage temperature t op & t stg -65 to +200 oc maximum thermal resistance junction to case r jc 0.8 oc/w notes: 1 / for ordering information, price, and availability, contact factory. 2 / screening based on mil-prf-19500. screening flows available on request. 3 / higher voltages available. 4 / pads 1 and 3 externally connected together smd1
note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: RH0027C doc electrical characteristic 4 / symbol typ max units instantaneous forward voltage drop (i f = 25 a, t a = 25oc, 300sec pulse) v f1 1.15 1.3 v dc instantaneous forward voltage drop (i f = 50 a, t a = 25oc, 300sec pulse) v f2 1.35 1.5 v dc instantaneous forward voltage drop (i f = 25 a, t a = 100oc, 300sec pulse) v f3 1.10 1.25 v dc instantaneous forward voltage drop (i f = 25 a,t a = -55oc, 300sec pulse) v f4 1.20 1.40 v dc reverse leakage current (rated v r , t a = 25oc, 300 s pulse min.) i r1 20 200 a reverse leakage current (rated v r , t a = 100oc, 300 s pulse min.) i r2 2.5 10 ma junction capacitance (v r = 10 v dc , t a = 25oc, f = 1 mhz) c j 100 250 pf reverse recovery time (i f = 500ma, i r = 1a, i rr = 250ma, t a = 25oc) t rr 30 35 nsec case outline: smd1 pin 1+3: anode pin 2: cathode solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sdr953s1 thru sdr955s1 2 1 3
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